Feasibility of Next-Generation Hybrid Integrated Power Switches in H-Bridges for Ultra-Efficient Power Electronics 

This project will evaluate a 1.2 kV Hybrid Integrated Power Switch (HIPS) that combines GaN devices for ultra‑fast, low‑loss switching with a Trench Clustered IGBT (TCIGBT) to deliver temperature‑stable operation with low conduction losses in an H‑bridge configuration.

The hybrid architecture limits the increase in on‑state resistance at high temperatures while retaining GaN’s characteristically low, load‑independent switching losses. The devices will be integrated into compact single‑ and three‑phase PCB/DCB half‑bridge modules, designed for low inductance and manufacturability.

This approach improves efficiency, reduces cooling requirements, and enables lighter, more compact inverters. As a UK‑developed technology, it strengthens domestic capability and supports next‑generation zero‑emission mobility.